عناصر مشابهة
the temperature dependence of the energy gap of sn and znln doped cuge2p3 semiconductor compound
| المصدر: | مجلة كلية التربية |
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| الناشر: |
الجامعة المستنصرية - كلية التربية
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| المؤلف الرئيسي: | |
| مؤلفين آخرين: | |
| المجلد/العدد: | ع 3 |
| محكمة: | نعم |
| الدولة: | العراق |
| التاريخ الميلادي: | 2009 |
| الصفحات: | 1014 - 1027 |
| ISSN: | 1812-0380 |
| رقم MD: | 429149 |
| نوع المحتوى: | بحوث ومقالات |
| قواعد المعلومات: | EduSearch |
| مواضيع: | |
| رابط المحتوى: |
| المستخلص: | The Fan and Shockly-Bardeen theoretical method is used to calculate the temperature dependence of energy gap in the temperature range (10- 425 K ) for the Sn and ZnTn doped CuGe2P3 Semiconductor compound. The results are in good agreement with those of the available reported experimental work. The temperature variation of Eg were discussed in terms of effects of the electron-phonon interaction and the lattice dilation . The effects of lattice thermal expansion on Eg is smaller than that of the lattice vibration, but both effects, compound, are found to be linear with T for the temperature range investigated. \ The Varshni's empirical relation is also used to calculate Eg versus T . It gives good results in comparison with these calculated as well as with the reported available experimental work. The effects of the hole concentration on both AEg and Eg are also given. |
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| وصف العنصر: | باللغة الانجليزية |
